Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-mum spectral region operating at room temperature
نویسندگان
چکیده
The electrical and photoelectrical properties of long wavelength nþppþ Hg1 xCdxTe structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise and detectivity have been calculated and optimized as a function of different variable such as alloy composition, doping concentration, thickness, and applied voltage to obtain optimized performance at room temperature. This numerical simulation can be used to optimize the mentioned parameters for other structures such as nþnpþ, nþp operating in photodiode, or photovoltaic mode. r 2006 Published by Elsevier Ltd. PACS: 85.60.Dw; 07.57.Kp
منابع مشابه
Quantum-dot infrared photodetectors: Status and outlook
This paper reviews the present status and possible future developments of quantum-dot infrared photodetectors (QDIPs). At the beginning the paper summarizes the fundamental properties of QDIPs. Next, an emphasis is put on their potential developments. Investigations of the performance of QDIPs as compared to other types of infrared photodetectors are presented. A model is based on fundamental p...
متن کاملPIN versus PN Homojunctions in GaInAsSb 2.0-2.5 Micron Mesa Photodiodes
The performances of a pin versus a pn structure from GaInAsSb materials operating at room temperature are compared both from a theoretical point of view and experimentally. Theoretically, it is found in materials limited by generationrecombination currents, pn junctions have a higher D* than pin junctions. The thinner depletion region of pn junctions results in a lower responsivity but a higher...
متن کاملAssessment of quantum dot infrared photodetectors for high temperature operation
Investigation of the performance of quantum dot infrared photodetectors QDIPs in comparison to other types of infrared photodetectors operated near room temperature is presented. The model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active reg...
متن کاملPerformance of InGaAs/InP Avalanche Photodiodes as Gated-Mode Photon Counters.
We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-mum wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temp...
متن کاملRoom-temperature short-wavelength infrared Si photodetector
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortcoming, however, can be overcome by introducing n...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Microelectronics Journal
دوره 38 شماره
صفحات -
تاریخ انتشار 2007